Insulated gate bipolar transistor

Results: 160



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31FOR IMMEDIATE RELEASE  NoProduct Inquiries Power Semiconductor Device Dept. B

FOR IMMEDIATE RELEASE NoProduct Inquiries Power Semiconductor Device Dept. B

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Source URL: www.mitsubishielectric.com

Language: English - Date: 2015-02-03 21:02:26
32Innovations Embedded  The Next Generation of Power Conversion Systems Enabled by SiC Power Devices  White Paper

Innovations Embedded The Next Generation of Power Conversion Systems Enabled by SiC Power Devices White Paper

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Source URL: www.rohm.com

Language: English
33Principal Research Results  Development of SiC Diode Applied Inverter Background Improvement of efficiency and compactness of inverter is essential for enhancing power electronics appliances utilized

Principal Research Results Development of SiC Diode Applied Inverter Background Improvement of efficiency and compactness of inverter is essential for enhancing power electronics appliances utilized

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Source URL: criepi.denken.or.jp

Language: English - Date: 2010-02-04 23:03:28
34Project Subjects Low-loss Compact Inverter Applied Equipment Background and Objective Innovation in power electronics technology can play an important role in realizing a low-carbon society through promoting energy savin

Project Subjects Low-loss Compact Inverter Applied Equipment Background and Objective Innovation in power electronics technology can play an important role in realizing a low-carbon society through promoting energy savin

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Source URL: criepi.denken.or.jp

Language: English - Date: 2011-11-04 00:31:50
35CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-04-08 17:14:26
36The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond

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Source URL: fab.cba.mit.edu

Language: English - Date: 2010-09-15 01:34:30
37REDW1994  [removed] Data Total Ionizing Dose Co60

REDW1994 [removed] Data Total Ionizing Dose Co60

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Source URL: www.nsrec.com

Language: English - Date: 2005-12-14 11:19:50
38REDW1998  Revision 0.1, Dec[removed]Prepared by: David M. Hiemstra

REDW1998 Revision 0.1, Dec[removed]Prepared by: David M. Hiemstra

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Source URL: www.nsrec.com

Language: English - Date: 2005-12-13 08:50:37
39Mar[removed]Vol[removed]Mitsubishi Electric Recent Development Results of Power Device • Editorial-Chief Kiyoshi Sakai

Mar[removed]Vol[removed]Mitsubishi Electric Recent Development Results of Power Device • Editorial-Chief Kiyoshi Sakai

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Source URL: www.mitsubishielectric.com

Language: English - Date: 2015-03-22 21:29:09
40BIPF60030 BYD Microelectronics Co., Ltd. Integrated Power Factor Correction Module  General Description

BIPF60030 BYD Microelectronics Co., Ltd. Integrated Power Factor Correction Module General Description

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Source URL: www.byd.com

Language: English